| PART |
Description |
Maker |
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| DL-3148-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| DL-3038-011 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs
Renesas Electronics Corporation
|
| M66512P M66512FP M66512 |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SLD332F |
805 nm, LASER DIODE
1W High Power Laser Diode
|
Sony Corporation
|
| DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| STH51002Z TH51002Z |
From old datasheet system
1300nm Laser in Coaxial TO-Package 1280 nm, LASER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
