| PART |
Description |
Maker |
| MJE5731A MJE5731 MJE5730 ON2039 |
POWER TRANSISTORS PNP SILICON 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1.0 AMPERE POWER TRANSISTORS
From old datasheet system
|
ON Semiconductor
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| MJ14001 MJ14003 MJ14002 ON1978 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| CPBT720 |
0.350W General Purpose PNP SMD Transistor. 40V Vceo, 1.500A Ic, 300 hFE.
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1.5A I(C) | SOT-23
|
Continental Device India Limited
|
| TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器，300 mA的LDO具有电源就绪输出
|
Yageo, Corp.
Microchip Technology, Inc.
Microchip Technology Inc.
|
| A92-BP |
500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MICRO COMMERCIAL COMPONENTS
|
| DDA114EU DDA114EU-7 DDA114TU DDA114TU-7 DDA114YU D |
PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
CONN, 300 PIN PLUG, 0.05 X 0.05 IN. CENTERLINES, MEG-ARRAY, UL REQUIRED 30 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
CONN, PLUG, .050 IN, MEG-ARRAY, 300 X
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
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