| PART |
Description |
Maker |
| RJK0204DPA-00-J5A RJK0204DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0208DPA-00-J5A RJK0208DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| D10SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Limited
Fujitsu Component Limited.
|
| PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode)
Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
| FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode)
60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MM1096BD MM1096BS MM1096B MM1096BF MM1096AF MM1096 |
System Reset (with built-in watchdog timer) Monolithic MM1096 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PSIP8
|
MITSUMI ELECTRIC CO., LTD.
Mitsumi Electronics, Corp.
|
| STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|
