PART |
Description |
Maker |
E2K-C E2K-C25MY2 |
Long-distance capacitive proximity sensor Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感
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Omron Electronics LLC Omron Electronics, LLC
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CMH01 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK 20 A, 400 V, N-Channel D2PAK 20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
LCD160X160A LCD-160X160A |
160 x 160 Dots Graphic LCD 160 × 160点阵图形液晶显示 CONNECTOR ACCESSORY
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
CMH08 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.9 to 12.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications
|
Toshiba Corporation Toshiba Semiconductor
|
SATCOM ACR7HXB17CFREQ TDR5HYD57CFREQ TDS5HYD57CFRE |
Temperature Compensated Crystal Oscillators(Frequency from 0.5 MHz to 160 MHz)(温度补偿晶体振荡频率变动:0.5 MHz-160 MHz)) TCXO, CLOCK, 0.5 MHz - 160 MHz, ACMOS OUTPUT TCVCXO, CLOCK, 0.5 MHz - 160 MHz, TTL OUTPUT TCXO, CLOCK, 0.5 MHz - 160 MHz, TTL OUTPUT TCXO, CLOCK, 0.5 MHz - 160 MHz, HCMOS OUTPUT
|
Vectron International, Inc.
|
CMS01 |
Switching Mode Power Supply Applications Zener Diode; Application: General; Pd (mW): 400; Vz (V): 12.4 to 12.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Toshiba Semiconductor Toshiba Corporation
|
IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲,350-400 V TRI N PLUG M 0-48 N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor... Powerex Power Semiconductors Powerex, Inc.
|
AP01L60T |
N-CHANNEL ENHANCEMENT MODE 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Advanced Power Electronics, Corp.
|