| PART |
Description |
Maker |
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E6 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
| KM416V4000C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16CMOS动态RAM(带快速页模式)) 4米16位的快速页面模式的CMOS动态RAM4米16位的CMOS动态随机存储器（带快速页模式））
|
Samsung Semiconductor Co., Ltd.
|
| KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
