PART |
Description |
Maker |
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
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GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100 250MHz 512K x 18 9Mb sync burst SRAM 225MHz 512K x 18 9Mb sync burst SRAM 200MHz 512K x 18 9Mb sync burst SRAM 166MHz 512K x 18 9Mb sync burst SRAM 150MHz 512K x 18 9Mb sync burst SRAM 133MHz 512K x 18 9Mb sync burst SRAM 150MHz 256K x 32 9Mb sync burst SRAM 166MHz 256K x 32 9Mb sync burst SRAM 225MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 32 9Mb sync burst SRAM 133MHz 256K x 36 9Mb sync burst SRAM 150MHz 256K x 36 9Mb sync burst SRAM 166MHz 256K x 36 9Mb sync burst SRAM 200MHz 256K x 36 9Mb sync burst SRAM 225MHz 256K x 36 9Mb sync burst SRAM 133MHz 256K x 32 9Mb sync burst SRAM 200MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165 72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
GS882V37AB-250 GS882V37AB-250I GS882V37AB-225 GS88 |
9Mb Burst SRAMs 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
75757-1231 |
3.50mm (.138) Pitch, MX150?/a> Header, Breakaway, Vertical, 6 Circuits, Gold (Au) Flash Plating, 11.20mm (.441) Mating Pin Length, 3.05mm (.120) PC Tail Length
|
Molex Electronics Ltd.
|
0757571281 |
3.50mm (.138) Pitch, MX150 Header, Breakaway, Vertical, 16 Circuits, Gold (AuFlash Plating, 11.20mm (.441) Mating Pin Length, 3.05mm (.120) PC Tail Length
|
Molex Electronics Ltd.
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