| PART |
Description |
Maker |
| SMS840 |
0.13A , 50V , RDS(ON) 10 P-Channel Enhancement MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| BSO4420 |
Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 7.8mOhm, 13A, LL
OptiMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| B37873K5473M60 B37873K5474M62 B37932K5223M60 B3793 |
CAPACITOR 47 NF 50V
CAPACITOR 470 NF 50V
CAPACITOR 22 NF 50V
KONDENSATOR 100NF 50V
CAPACITOR 220 NF 50V
CAPACITOR 1 UF 50V 电容超滤50V
CAPACITOR 1 PF 50V 电容公积0V
|
Motorola Mobility Holdings, Inc.
EPCOS AG
|
| STB13NK60Z05 STP13NK60Z STP13NK60ZFP STW13NK60Z ST |
N-CHANNEL 600V-0.48ヘ-13A-TO-220/FP-D?/I?PAK-TO-247 Zener-Protected SuperMESH⑩ MOSFET
N-CHANNEL 600V-0.48Ω-13A-TO-220/FP-D2/I2PAK-TO-247 Zener-Protected SuperMESH?/a> MOSFET
N-CHANNEL 600V-0.48Ω-13A-TO-220/FP-D2/I2PAK-TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 600V-0.48楼?-13A-TO-220/FP-D漏梅/I漏梅PAK-TO-247 Zener-Protected SuperMESH垄芒 MOSFET
|
STMicroelectronics
|
| FCP13N60N FCPF13N60NT |
N-Channel MOSFET 600V, 13A, 0.258Ω
N-Channel MOSFET 600V, 13A, 0.258楼?
|
Fairchild Semiconductor
|
| SB80-05H SB80-05 |
Schottky Barrier Diode (Twin TYpe Cathode Common) 50V, 8A Rectifier
50V/ 8A Rectifier
50V, 8A Rectifier 50V8A条整流器
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SB100-05H |
50V/ 10A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 50V,10A Rectifier
50V, 10A Rectifier(用于高频整流应用的重复反向电50V，平均整流电0A 的整流器) 50V0A条整流器（用于高频整流应用的重复反向电压- 50V的平均整流电0A条的整流器）
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| STW13NK100Z |
N-CHANNEL 1000 0.56 OHM 13A TO-247 ZENER-PROTECTED SUPERMESH MOSFET
N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| DTC143ZAA DTC114GFA DTC124GFA DTC115GFA DTC123YFA |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 30mA的一（c）|2VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 500NA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
|
Samsung Semiconductor Co., Ltd.
Rohm Co., Ltd.
|
