| PART |
Description |
Maker |
| MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| MGSF1N02ELT1-D MGSF1N02ELT1G |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
|
