PART |
Description |
Maker |
K7J643682M07 K7J641882M |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
IS61QDPB42M36A2 |
2Mx36 and 4Mx18 configuration available
|
Integrated Silicon Solu...
|
GS8662T09E-333 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM 2M X 36 QDR SRAM, 0.5 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC] GSI Technology
|
NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
GS864418 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|