| PART |
Description |
Maker |
| CEM8207 CEM8207ESD |
20V N Channel MOS
Dual N-Channel Enhancement Mode Field Effect Transistor
|
Chino-Excel Technology Corp.
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| 3SK199 E001702 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| BF990A |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
