| PART |
Description |
Maker |
| MCE-6E8F-Z02 |
650 nm LASER DIODE
|
Unity Opto Technology
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| LT050MS LT050PS |
Compact Laser Diode for DVD(635nm-5mW)
Red Laser Diode
|
SHARP[Sharp Electrionic Components]
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| SW02CXC300 SW15CXC300 SW02PCN020 SW34CXC1870 SW50C |
650 A, 200 V, SILICON, RECTIFIER DIODE
650 A, 1500 V, SILICON, RECTIFIER DIODE
30 A, 200 V, SILICON, RECTIFIER DIODE
4100 A, 3400 V, SILICON, RECTIFIER DIODE
1860 A, 5000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| DL-3147-021 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| M66512P M66512FP M66512 |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
