| PART |
Description |
Maker |
| ACASA3011B1182P100 ACASA1K1T1K1P100 ACASA22K1T1K1P |
THNFLM RES ARRAY CONVEX 0612 3.01K 25 PPM 0.5% 11.8K SMD - Tape and Reel
Precision Thin Film Chip Resistor Array
THNFLM RES ARRAY CONVEX 0612 3.01K 25 PPM 0.25% 11.8K SMD - Tape and Reel
THNFLM RES ARRAY CONVEX 0612 20K 25 PPM 0.5% 80K SMD - Tape and Reel
THNFLM RES ARRAY CONVEX 0612 29.4K 25 PPM 0.5% 29.4K SMD - Tape and Reel
THNFLM RES ARRAY CONVEX 0612 10K 25 PPM 0.25% 50K SMD - Tape and Reel
THNFLM RES ARRAY CONVEX 0612 249R 25 PPM 0.25% 1K SMD - Tape and Reel
|
Vishay Beyschlag
Vishay Siliconix
|
| CDS3C05GTA CDS3C09GTA B72500D0050A060 B72500D0090A |
CeraDiode Reliable ESD protection of single lines
|
EPCOS AG
EPCOS[EPCOS]
|
| ECJRVB1H222M ECJRVB1H332M ECJRVB1H103M ECJRVB1H152 |
Multilayer Ceramic Capacitors (4 Array Type) Input/Output circuit for computer motherboards
Multilayer Ceramic Capacitors(4 Array Type)
Multilayer Ceramic Capacitors (4 Array Type)
Multilayer Ceramic Capacitors(4 Array Type)
|
Panasonic Semiconductor
Panasonic Battery Group
|
| CDEP134-1R2NB CDEP134-1R6MB CDEP134-1R6MC CDEP134- |
POWER INDUCTORS
POWER INDUCTORS <SMD Type> 功率电感\u003cSMD Type\u003e
POWER INDUCTORS <SMD Type> 1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS <SMD Type> 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS <SMD Type> 1 ELEMENT, 0.68 uH, GENERAL PURPOSE INDUCTOR, SMD
|
SUMIDA CORPORATION.
Sumida, Corp.
|
| 02-0274-0100 01-0109-0100 01-0109-01SD |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
| KMM5364003BSW KMM5364003BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KM44C4005C KM44C4105C KM44C4005CK-6 KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MT4C4004J |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
