| PART |
Description |
Maker |
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB
1852.6 A, 200 V, SCR
1891.85 A, 1800 V, SCR
1271.7 A, 200 V, SCR, TO-200AC
1271.7 A, 400 V, SCR, TO-200AC
1271.7 A, 600 V, SCR, TO-200AC
1271.7 A, 1000 V, SCR, TO-200AC
1271.7 A, 800 V, SCR, TO-200AC
1998.61 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| VSKT170-04 VSKT17010 VSKT170-08 VSKT170-12 VSKT170 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Siliconix
|
| CS218I-50PBLEADFREE CS218I-50DLEADFREE CS218I-50PL |
50 A, 1200 V, SCR, TO-218
50 A, 400 V, SCR, TO-218
50 A, 1000 V, SCR, TO-218
50 A, 800 V, SCR, TO-218
50 A, 200 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 400 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 1000 V, SCR, TO-218
63 A, 1200 V, SCR, TO-65
63 A, 600 V, SCR, TO-65
63 A, 200 V, SCR, TO-65
110 A, SCR, TO-83
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| CS3P-40B CS3P-40D CS3P-40M CS3P-40N CS3P-40P CS3P- |
40 A, 1000 V, SCR TO-3P, 3 PIN
40 A, 1200 V, SCR TO-3P, 3 PIN
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR
3500 V, GATE TURN-OFF SCR
1200 V, GATE TURN-OFF SCR
3600 V, GATE TURN-OFF SCR
2300 V, GATE TURN-OFF SCR
2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
| WG1204301 WG20042R23 WG12032R23 WESTCODESEMICONDUC |
4300 V, GATE TURN-OFF SCR
4200 V, GATE TURN-OFF SCR
3200 V, GATE TURN-OFF SCR
1400 V, GATE TURN-OFF SCR
3400 V, GATE TURN-OFF SCR
4100 V, GATE TURN-OFF SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
|
