PART |
Description |
Maker |
HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM) Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24 Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp. Intersil Corporation
|
LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes Infrared Light Emitting Diodes From old datasheet system GaAs Infrared Light Emitting Diode
|
Panasonic Corporation Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
TLN217 |
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
|
Toshiba Corporation Toshiba Semiconductor
|
NCP5890 NCP5890MUTXG |
Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications
|
ON Semiconductor
|
OL-WEDGE |
The light source of the OL-Wedge series is suggested the Everlight LED T5 Cobra light tube.
|
Everlight Electronics Co., Ltd
|
TB2-8111-001 TB1-7401-101 |
CONFIRMATION LIGHT FOR PRE-EMPTION / RED LIGHT RUNNING
|
Dialight Corporation http://
|
2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT Simple Drive Requirements
|
International Rectifier
|
HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|