| PART |
Description |
Maker |
| MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL21E060IY |
High Power GaAs FET
|
Eudyna Devices
|
| CFY35 Q62702-F1394 CFY35-20 CFY35-23 Q62702-F1393 |
From old datasheet system
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
SCREWDRIVER, MULTI BLADE 7PCSCREWDRIVER, MULTI BLADE 7PC; Kit contents:7 Piece Set X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FLL21E090IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| MSC8004 |
HIGH POWER GaAs FET
Transistor
|
ASI
Advanced Semiconductor
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|
