PART |
Description |
Maker |
FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS From old datasheet system NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http:// TOSHIBA[Toshiba Semiconductor]
|
2SJ549 2SJ549L 2SJ549S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
2SJ529 2SJ529L 2SJ529S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|