| PART |
Description |
Maker |
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| 2SD1273A 2SD1273Q 2SD1273AO 2SD1273P 2SD1273AQ |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|叩| 80V的五（巴西）总裁| 3A条一（c）|的SOT - 186
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|的SOT - 186
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
From old datasheet system
TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),SOT-186
|
Panasonic, Corp.
|
| 2N2894 2N2818 2N2823 2N2892 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
PNP SILICON TRANSISTOR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | STR-5/16
|
SEME-LAB[Seme LAB]
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| 2SD1259Q 2SD1259AO 2SD1259P |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|21VAR
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SB560 2SD438 2SD438F 2SD438E 2SB560E |
Low-Frequency Power Amp Applications
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|叩| 80V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2VAR
|
http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| 2SD1776P 2SD1776AP 2SD1776AO 2SD1776AQ 2SD1776O |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186
|
NEC, Corp.
|
| 2N4211 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AE
|
|
| SK3202 |
TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),TO-202VAR
From old datasheet system
|
Thomson Consumer Electronics
|
| 2SD1271/2SD1271A 2SD1271AQ 2SD1271AP 2SD1271P |
2SD1271. 2SD1271A - NPN Transistor
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | SOT-186
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7A条一（c）|的SOT - 186
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | SOT-186 晶体管|晶体管|叩| 80V的五（巴西）总裁| 7A条一（c）|的SOT - 186
|
Panasonic Industrial Solutions
Rohm Co., Ltd.
|
| 2SC5574 2SC5574E 2SC5574F |
Power Transistor(????朵?绠?
4 A, 80 V, NPN, Si, POWER TRANSISTOR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220FN
|
Rohm CO.,LTD.
|
