| PART |
Description |
Maker |
| NVD5890NL NVD5890NLT4G |
Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
|
ON Semiconductor
|
| NVD5890NL |
40 V, 3.7 mOhm, 123 A, Single N−Channel Power MOSFET
|
ON Semiconductor
|
| MMSZ4XXXT1 MMSZ4XXXT1G MMSZ4XXXT3 MMSZ4XXXT3G MMSZ |
Low Current Zener Diode 5.6 V SOD-123; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
Zener Voltage Regulators 500 mW SOD123 Surface Mount(500mW锛?OD123锛?〃?㈠?瑁??绾崇ǔ???)
Zener Voltage Regulators 500 mW SOD−123 Surface Mount
Zener Voltage Regulators 500 mW SOD−123 Surface Mount 25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Voltage Regulators 500 mW SOD−123 Surface Mount 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Voltage Regulators 500 mW SOD−123 Surface Mount 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
http://
ONSEMI[ON Semiconductor]
Leshan Radio Company, Ltd.
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| MBR0540T1 MBR0540T3 |
(MBR0540T1 / MBR0540T3) Surface Mount Schottky Power Rectifier SOD-123 Power Surface Mount Package
|
ON Semiconductor
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRLS3034PBF IRLSL3034PBF IRLS3034TRLPBF IRLS3034PB |
HEXFET Power MOSFET
195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
|
