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2N4216 - SCR, V(DRM) = 200V TO 299.9V

2N4216_4568643.PDF Datasheet

 
Part No. 2N4216
Description SCR, V(DRM) = 200V TO 299.9V

File Size 104.85K  /  1 Page  

Maker

New Jersey Semi-Conductor Products, Inc.



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Part: 2N4209
Maker: MOTOROLA(摩托罗拉)
Pack: CAN3
Stock: 96
Unit price for :
    50: $2.97
  100: $2.82
1000: $2.68

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 Full text search : SCR, V(DRM) = 200V TO 299.9V
 Product Description search : SCR, V(DRM) = 200V TO 299.9V


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SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
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