| PART |
Description |
Maker |
| IGC109T120T6RM |
IGBT4 Medium Power Chip
|
Infineon Technologies AG
|
| IGC99T120T6RM |
IGBT4 Medium Power Chip
|
Infineon Technologies AG
|
| IGC27T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC142T120T6RL |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC109T120T6RL |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IDC21D120T6M |
Diode EMCON 4 Medium Power Chip
|
Infineon Technologies AG
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| APTGL60A120T1G |
Phase leg Trench Field Stop IGBT4 Power module
|
Microsemi Corporation
|
| APTGL475A120D3G |
Phase leg Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
| APTGL475SK120D3G |
Buck Chopper Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
