| PART |
Description |
Maker |
| ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation
Anpec Electronics, Corp.
|
| TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V，夹断电.12AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc.
ETC
|
| IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| 2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor
List of Unclassifed Manufacturers
|
| IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated
60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
