| PART |
Description |
Maker |
| W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR
4M X 32 DDR DRAM, 5 ns, PBGA90
8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond
WINBOND ELECTRONICS CORP
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M395T2863QZ4-CE65 M395T2863QZ4-CE68 M395T2863QZ4-C |
128M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE AND ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
BCD Semiconductor Manufacturing, Ltd.
|
| MT46V8M16BJ-75EITA MT46V8M16BJ-75ELITA MT46V8M16BJ |
8M X 16 DDR DRAM, 0.75 ns, PBGA60 16 X 9 MM, LEAD FREE, FBGA-60
32M X 4 DDR DRAM, 0.75 ns, PBGA60
|
Xicon Passive Components
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
|
