| PART |
Description |
Maker |
| PIXIPOINT |
PixiPoint Extended PS/2 Protocol Specification (116k) PixiPoint？扩展的PS / 2协议规范16k
|
Electronic Theatre Controls, Inc.
|
| XCV405E-8BG560C XCV405E-8BG560I XCV405E-8FG560C XC |
Fast, Extended Block RAM, 1.8 V FPGA Family
Extended Memory Field Programmable Gate Arrays
|
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
| ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM
16 Kbit Serial I 2 C EEPROM with Extended Addressing
(ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing
CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes
16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM，带有扩展寻址
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CPCI-3915A-ULVC10M512 CPCI-3915ACM15M512 CPCI-3915 |
Extended temperature option
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| SE051C106KAR SE035C475KAR SE043C106KAR |
Extended Commercial Radial Range
|
AVX Corporation
|
| 225TMA100M 225TMA450M 225TMA350M 476TMA010M 476TMA |
Extended Life - High voltage
|
Illinois Capacitor, Inc...
|
