| PART |
Description |
Maker |
| MBRS330T3 MBRS360T3 |
surface Mount Schottky Power Rectifie
|
TY Semiconductor Co., Ltd
|
| SPK1245-C-S-A01 |
SCHOTTKY BARRIER SOLAR RECTIFIE VOLTAGE 45 Volts CURRENT 12 Amperes
|
Rectron Semiconductor
|
| GBLCSC05 GBLCSC03 GBLCSC05C GBLCSC03C GBLCSC05-T13 |
ULTRA LOW CAPACITANCE TVS ARRAY
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE
200 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
PROTEC[Protek Devices]
|
| CS220-8N CS220-8B CS220-8D CS220-8M CENTRALSEMICON |
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 600 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 800 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 200 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 400 V, SCR, TO-220AB
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| BYU27-200 BUV28-200 EFP30CP |
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP
3.5 A, 200 V, SILICON, RECTIFIER DIODE
30 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AD
|
Vishay Beyschlag
GENERAL SEMICONDUCTOR INC
|
| SD202N20PCPBF SD202N16PVPBF |
200 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AC
200 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AC
|
|
| BYW56 BYW54 BYW52-TR |
2 A, 200 V, SILICON, RECTIFIER DIODE ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Silicon Mesa Rectifiers
|
Vishay Beyschlag
Vishay Siliconix
|
| CMPD3003CTR CMPD3003ABK CMPD3003BK |
0.6 A, 200 V, 2 ELEMENT, SILICON, SIGNAL DIODE
0.6 A, 200 V, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| 1N387907 1N3883R 1N3879R 1N381 1N382 1N3882R |
Fast Recovery Rectifier
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 400; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 50; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 300; trr (nsec): 200; VF (V): 1.4; IR (µA): 15;
|
Microsemi Corporation
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
|
