| PART |
Description |
Maker |
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V547S90PFI |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 128K X 36 ZBT SRAM, 9 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| IS61NVF102418-6.5B2 IS61NVF25672-6.5B1 IS61NVF5123 |
1M X 18 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
512K X 36 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 7.5 ns, PBGA209
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IS61NP25618-100B IS61NP25618-100B2 IS61NP25618-100 |
256K X 18 ZBT SRAM, 5 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
MERITEK Electronics, Corp.
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
|
Micron Technology, Inc.
|
| CY7C1370D-250BZI CY7C1372D-167BGC CY7C1372D-167BZC |
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3.4 ns, PQFP100
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO
DIODE, ZENER, 24V, 5%, 1W&
DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| GS8320Z36T-166V GS8320Z36T-133V GS8320Z36T-166VT G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
1M X 36 ZBT SRAM, 7 ns, PQFP100 ROHS COMPLIANT, TQFP-100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 5.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 8.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
|
