| PART |
Description |
Maker |
| 2N682 2N681 2N691 |
25A silicon controlled rectifier. Vrsom 75V.
25A silicon controlled rectifier. Vrsom 35V.
25A silicon controlled rectifier. Vrsom 840V.
|
General Electric Solid State
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| GBPC25005W GBPC2501 GBPC2510 GBPC2510W GBPC25005 G |
Dual General-Purpose Operational Amplifier 8-SOIC 0 to 70
25A GLASS PASSIVATED BRIDGE RECTIFIER
8 A, 5-V Input Non-Isolated Wide-Output Adjust SIP Module w/Auto-Track 8-SIP MODULE -40 to 85 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
50-A, 8-V to 14-V Input, Non-Isolated, Wide-Output Adjust, Vertical Power Module 21-DIP MODULE -40 to 85 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Isolated Flyback Switching Regulator with 9V Output 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| NTE5327 NTE5326 NTE5328 |
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 800V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 600V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 1000V.
|
NTE Electronics
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
| DBG250G |
Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier
|
Sanyo Semicon Device
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| KBJ2501 KBJ2502 KBJ2510 KBJ2505 KBJ2504 KBJ2503 KB |
Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 20V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel
25A SINGLE PHASE SILICON BRIDGE RECTIFIER
Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 20V; Case Size: 3.4x1.9 mm; Packaging: Tape & Reel 5A单相硅桥式整流器
25A Single-Phase Silicon Bridge Rectifier
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
SEP ELECTRONIC
|
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