| PART |
Description |
Maker |
| UTT70P10G-TA3-T UTT70P10L-TA3-T |
70A, 100V P-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| BSP296 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.8 Ohm, 1.0A, LL
|
Infineon
|
| SPP15P10P |
Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SSG70C60 SSG70C40 SSG70C80 SSG70C100 |
TRIAC|600V V(DRM)|70A I(T)RMS|TO-209VARM12
TRIAC|400V V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 400V五（DRM）的|0A口（T）的有效值|09VARM12
TRIAC|800V V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 800V的五（DRM）的|0A口（T）的有效值|09VARM12
TRIAC|1KV V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 1KV交五（DRM）的|0A口（T）的有效值|09VARM12
|
Microsemi, Corp.
|
| STE70NM60 9410 |
N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
N-CHANNEL 600V - 0.050 OHM - 70A ISOTOP ZENER-PROTECTED MDMESH POWERMOSFET
From old datasheet system
|
STMicroelectronics
|
| VTOF70-08IO7 VTO70-08IO7 VTO70-16IO7 VTOF70-16IO7 |
THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|800V V(RRM)|70A I(T)
THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.6KV V(RRM)|70A I(T)
THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.4KV V(RRM)|70A I(T)
THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.2KV V(RRM)|70A I(T)
THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|1.6KV V(RRM)|70A I(T) 可控硅模块| 3 - PH值全波|半CNTLD |消委会| 1.6KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|1.2KV V(RRM)|70A I(T) 可控硅模块| 3 - PH值全波|半CNTLD |消委会| 1.2KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|800V V(RRM)|70A I(T) 可控硅模块| 3 - PH值全波|半CNTLD |消委会| 800V的五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|1.4KV V(RRM)|70A I(T) 可控硅模块| 3 - PH值全波|半CNTLD |消委会| 1.4KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|3-PH FULL-WAVE|HALF-CNTLD|CC|1.4KV V(RRM)|70A I(T) 可控硅模块| 3 - PH值全波|半CNTLD |消委会| 1.4KV五（无线资源管理）|70A我（翻译
|
Dynex Semiconductor, Ltd.
|
| 70EPS08 70EPS08J 70EPS12 |
800V 70A Std. Recovery Diode in a PowIRtab (Short) package
1200V 70A Std. Recovery Diode in a PowIRtab (Short) package
|
International Rectifier
|
