PART |
Description |
Maker |
W9825G2JB |
2M X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9812G2IB |
1M × 4 BANKS × 32BITS SDRAM
|
Winbond
|
W9864G2JH-6A W9864G2JH-6I W9864G2JH-7 W9864G2JH13 |
512K x 4 BANKS x 32BITS SDRAM 512K x 4 BANKS x 32BITS SDRAM
|
Winbond
|
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM 1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp http:// Winbond Electronics, Corp.
|
W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM Low Power SDRAM 4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
|