PART |
Description |
Maker |
M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC PATCHCORD SQ SCKT-ALLIG CLIP RED
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M470T2864FB3 |
200pin Unbuffered SODIMM
|
Samsung semiconductor
|
SHB211 |
2 DDR3 SODIMM support up to 8 GB
|
Axiomtek Co., Ltd.
|
KMM466F404BS2 |
4M x 64 DRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M464S6453CKS |
PC133/PC100 SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HMT112S6TFR8C-G7 HMT112S6TFR8C-H9 HMT125S6TFR8C-G7 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
HMT325S6CFR8C |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
SDN03264C1CJ1SA-60 |
256MB DDR SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
M464S3323BN0-C1H/L1H M464S3323BN0-C1L/L1L |
144pin SDRAM SODIMM 144Pin支持内存的SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|