PART |
Description |
Maker |
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
U10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
PMEG4010ER10 PMEG4010ER |
1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE 1 A low VF MEGA Schottky barrier rectifier
|
NXP Semiconductors N.V.
|
GD500SD |
The GD500SD is designed for low power rectification and high reliability. SURFACE MOUNT SCHOTTKY BARRIER DIODE SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
NSR01F30NXT5G10 NSR01F30 |
30 V, 100 mA, Low Vf Schottky, DSN2 (0201) Schottky Barrier Diode
|
ON Semiconductor
|
5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI Advanced Semiconductor, Inc.
|
YG865C10R |
Low IR Schottky barrier diode 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Fuji Electric FUJI ELECTRIC CO LTD
|
YG865C04R |
Low IR Schottky barrier diode 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Fuji Electric FUJI ELECTRIC CO LTD
|