PART |
Description |
Maker |
ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FDME1024NZT |
Dual N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
FDMS86300DC |
N-Channel Dual CoolTM Power Trench? MOSFET 80 V, 60 A, 3.1 mΩ
|
Fairchild Semiconductor
|
FDMS2504SDC |
N-Channel Dual Cool-TM Power Trench SyncFet-TM 25V, 49A, 1.2mOhms
|
Fairchild Semiconductor
|
STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
APTGT450DU60G |
Dual common source Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
PMDPB80XP |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
SUF3001 |
Dual P-channel Trench MOSFET
|
AUK corp
|
PMDPB65UP |
20 V, 3.5 A dual P-channel Trench MOSFET
|
NXP Semiconductors
|
FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology 62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation IXYS, Corp.
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