| PART |
Description |
Maker |
| 2SK3591-01MR 2SK3591 |
N-CHANNEL SILICON POWER MOSFET 40 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608 |
N-CHANNEL SILICON POWER MOSFET
N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| FMC05N50E |
N-CHANNEL SILICON POWER MOSFET
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET T-PACK(S), 3 PIN
|
Fuji Electric Holdings Co., Ltd.
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| 2SK3596-01L 2SK3596-01S 2SK3596-01SJ |
N-CHANNEL SILICON POWER MOSFET 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| RJK0355DPA RJK0355DPA-00-J0 |
30 A, 30 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
|
