| PART |
Description |
Maker |
| IDT6168LAE IDT6168SAE IDT6168SART |
x4 SRAM
x4SRAM
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package x4的SRAM
|
TE Connectivity, Ltd.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构（带总线延迟结构28K × 36至流水线式的SRAM
128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM)
From old datasheet system
|
Cypress Semiconductor Corp.
|
| AS7C33128NTD18B AS7C33128NTD18B-200TQIN AS7C33128N |
3.3V 128Kx18 Pipelined SRAM with NTD 128K X 18 ZBT SRAM, 3 ns, PQFP100
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS7C252MNTD18A AS7C252MNTD18A_V1.2 AS7C252MNTD18A- |
2.5V 2M x 18 Pipelined SRAM with NTD 2M X 18 ZBT SRAM, 3.2 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
