PART |
Description |
Maker |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
|
Hitachi Semiconductor
|
EN27LN4G08 |
4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
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K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic Samsung semiconductor
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 1G X 1 FLASH 3V PROM, 120 ns, PDSO56 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc. SPANSION LLC
|
SST25VF040-20-4C-QAE SST25VF040-20-4C-S2AE SST25VF |
4 Mbit SPI Serial Flash 512M X 8 FLASH 2.7V PROM, PDSO8
|
Silicon Storage Technology, Inc Silicon Storage Technol...
|
CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32 2 Megabit CMOS Flash Memory Bulk Erase Flash Memory, 2Mb
|
http:// CATALYST[Catalyst Semiconductor]
|
HMF8M16F8V HMF8M16F8V-90 |
FLASH-ROM MODULE 16MByte (8M x 16-Bit) Memory Stack Type 闪光- ROM模块16MByte米16位)内存堆栈 FLASH-ROM MODULE 16MByte (8M x 16-Bit) - Memory Stack Type FLASH-ROM MODULE 16MByte (8M x 16-Bit) Memory Stack Type
|
Electronic Theatre Controls, Inc. Hanbit Electronics Co.,Ltd ETC[ETC] List of Unclassifed Manufacturers
|
M5M29KB331ATP M5M29KT331ATP |
Memory>NOR type Flash Memory
|
Renesas
|
TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
|
NUMONYX Intel Corporation
|
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