| PART |
Description |
Maker |
| TPC8204 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| 2SJ440 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6N05FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6J207FE-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
| SSM6L05FU |
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6108 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
