| PART |
Description |
Maker |
| ENA0444A SB10015M-TL-E SB10015M12 |
15V, 1.0A Rectifi er
|
Sanyo Semicon Device
|
| APT75DL60B APT75DL60BG APT75DL60S APT75DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| PFF50 |
Axial Leaded Hermetically Sealed High Voltage Superfast Rectifi er Diode
|
Semtech Corporation
|
| CBRHDSH1-200 CBRLD1SERIES |
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
1.0A, 40V thru 200V Schottky Bridge Rectifier in the HD DIP package
1.0A, 200V thru 1000V Bridge Rectifi ers
|
Central Semiconductor Corp
|
| UF8J |
SURFACE MOUNT ULTRAFAST RECTIFI ER VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes
|
Yea Shin Technology Co., Ltd
|
| TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CHF15KE10 CHF15KE10A CHF15KE12 CHF15KE12A CHF15KE1 |
FLIP CHIP TVS DIODES
Patented Flip Chip Series 专利倒装芯片系列
From old datasheet system
Transient Voltage Suppressor
FLIP CHIP TVS DIODES 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CAP,CERAMIC,470PF,5%,50V,BOX,0.120(3.1)HX0.100(2.5 )TX0.138(3.5)LX0.100(2.5)LSX0 倒装芯片TVS二极
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MPXM2010 MPXM2010D MPXM2010DT1 MPXM2010GS MPXM2010 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
From old datasheet system
10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Motorola, Inc
|
