PART |
Description |
Maker |
HM-6564202 HM4-65642B_883 HM1-65642_883 HM1-65642B |
RAM, Asynchronous CMOS, 8Kx8, Access Time 150ns, 75-250A 8K x 8 Asynchronous CMOS Static RAM
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INTERSIL[Intersil Corporation]
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AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
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Alliance Semiconductor
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UPB100474B-15 UPB100474B-10 UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns. 1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns. 1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
|
NEC
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5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
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UT62L5128BS-70LI UT62L5128BS-55LLI UT62L5128BS-55L |
Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
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Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
UT62L5128BS-55L UT62L5128BS-55LE UT62L5128BS-55LL |
Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
5962F9687301QXA 5962F9687301QXX 5962F9687301QYA 59 |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 5E5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 5E5rads(Si)
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Aeroflex Circuit Technology
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