| PART |
Description |
Maker |
| TF1204 E005913 |
SOLID STATE GTR DRIVER MODULE (GTR DRIVER)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules
PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模
Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| MG15G6EL1 |
GTR Module
|
Toshiba
|
| MIG30J951H |
INTEGRATED GTR MODULE 综合滋养模块
|
Toshiba, Corp.
Toshiba Semiconductor
|
| QM10HB-2H |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| MG200J6ES60 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MBRF10100-G MBRF1030-G MBRF1040-G |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
|
Comchip Technology
|
| MG15N2Y MG150G2YK1 MG150M2YL1 MG25M2YK1 MG25G2YK1 |
TRANSISTOR MODULES
|
ETC[ETC]
|
| EVF31T-050A |
6 in one-Package Power Transistor Modules
|
ETC
|
