| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| CS5467-IS CS5467-ISZ CS546707 |
Four-channel Power / Energy IC
|
Cirrus Logic
http://
|
| IRF533R IRF532R IRF530 IRF530R IRF531 IRF533 IRF53 |
N-Channel Power MOSFETs Avalanche Energy Rated
|
HARRIS[Harris Corporation]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| PHW9N60E PHB9N60E |
PowerMOS transistors Avalanche energy rated
GT 10C 10#16 SKT PLUG RTANG 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| EM4-DINAV53 EM4-DINAV13ADR EM4-DINAV13AOR EM4-DINA |
Energy Management Energy Meter with plug-in Output Modules 能源管理电能表与插件输出模块
|
Electronic Theatre Controls, Inc.
|
| EM3-DINAV33DX EM3-DINAV83DX EM3-DINAV93DX EM3-DINA |
Energy Management Energy Meter with plug-in Output Modules
|
Electronic Theatre Controls, Inc.
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
