| PART |
Description |
Maker |
| MHL19338NN |
PCS Band RF Linear LDMOS Amplifier
|
Freescale Semiconductor, Inc
|
| MHL9838 MHL9838D |
CELLULAR BAND RF LINEAR LDMOS AMPLIFIER 蜂窝频段射频线性LDMOS的放大器
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MHPA21010 |
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
|
Motorola
|
| MHPA19010N |
PCS Band RF Linear LDMOS Amplifier PCS频段的射频线性LDMOS的放大器
|
飞思卡尔半导体(中国)有限公司
|
| MHL9838N |
Cellular Band RF Linear LDMOS Amplifier 蜂窝频段射频线性LDMOS的放大器
|
Motorola Mobility Holdings, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| SKY77928-11 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 16 Linear TRx Switch Ports-Dual-Band TD-SCDMA, TDD LTE Band 39-Dual Antenna
|
Skyworks Solutions Inc.
|
| BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
