| PART |
Description |
Maker |
| IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256 |
32K x 8 Low Power CMOS Static RAM(32K x 8 浣????MOS???RAM)
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC[ETC]
Integrated Silicon Solution Inc
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| UT62256CPC |
32K X 8 BIT LOW POWER CMOS SRAM
|
UTRON
|
| LY62256RL-35LL LY62256RL-35LLE LY62256RL-35LLET LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L256 LY62L256E LY62L256I LY62L256PL LY62L256PV |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| GM76U256CLLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| AS6C62256A AS6C62256A-70PIN |
Common data inputs and data outputs
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor ...
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| T15V256A03 |
32K X 8 LOW POWER CMOS STATIC RAM
|
Taiwan Memory Technology
|
