| PART |
Description |
Maker |
| FDD668511 |
30V P-Channel PowerTrenchò MOSFET
|
Fairchild Semiconductor
|
| MSP2321 |
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0207SE |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0206W |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0205W |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| QS5U21 |
Transistors > MOS FET > TSMT3,5,6 Series
Small switching (?20V ?1.5A)
From old datasheet system
Small switching (-20V, -1.5A)
|
ROHM[Rohm]
|
| HITK0203MP-15 HITK0203MPTL-HQ |
20V, 2.9A, 90m?max Silicon N Channel MOS FET Power Switching
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
