| PART |
Description |
Maker |
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE
TV 100C 100#22D SKT RECP
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RM10TN-H RM10 |
From old datasheet system
Three-Phase Diode Bridge Modules
Rectifier Diode Modules for ASIPM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| VBO54-12NO7 VBO54-14NO7 VBO54-16NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SKKH15_05E SKKH15_08E SKKH15 SKKT15 SKKT15_16E SKK |
Thyristor / Diode Modules 24 A, 1400 V, SCR
Thyristor / Diode Modules 24 A, 1200 V, SCR
|
http://
Semikron International
|
| SKKD162 SKKD162_08 SKKD162_12 SKKD162_14 SKKD162_1 |
Rectifier Diode Modules 195 A, 1400 V, SILICON, RECTIFIER DIODE
Rectifier Diode Modules 195 A, 2200 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| DFM1200FXM18-A |
Fast Recovery Diode Modules - Dual Diode 快恢复二极管模块-双二极管
|
Dynex Semiconductor, Ltd.
|
