Part Number Hot Search : 
EPA3367 DC9013 LDA111 EC6A07 EMK23 MRF9135L HD74HC L6227Q
Product Description
Full Text Search

EIA1718A-2P - 17.3-18.1GHz, 2W Internally Matched Power FET

EIA1718A-2P_4437340.PDF Datasheet


 Full text search : 17.3-18.1GHz, 2W Internally Matched Power FET
 Product Description search : 17.3-18.1GHz, 2W Internally Matched Power FET


 Related Part Number
PART Description Maker
EIA1718A-2P 17.3-18.1GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
D2203 D2203UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
D2219UK D2219 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
D2021UK D2021 Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
SEME-LAB[Seme LAB]
D2213UK D2213    METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
SEME-LAB[Seme LAB]
D2218UK CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
D1053 D1053UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的,推挽式)(镀金多用的DMOS射频硅场效应管(50 28V 1GHz的,推挽式)
METAL GATE RF SILICON FET
3M Company
SEME-LAB[Seme LAB]
ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带,四三分贝隔GHz时的CMOS 1.65 V.75V的,2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
Analog Devices, Inc.
AD[Analog Devices]
KH104 DC to 1.1GHz Linear Amplifier
Cadeka
EL5191ACSZ EL5191ACW-T7A EL5191ACWZ-T7 EL5191 EL51 1GHz Current Feedback Amplifier with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO6
1GHz Current Feedback Amplifier with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
Circular Connector; No. of Contacts:55; Series:JTP02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-35
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),680A I(T),TO-200AC RoHS Compliant: Yes
Intersil, Corp.
Intersil Corporation
MB511 1GHz HIGH SPEED PRESCALER
FUJITSU
BC2102 Sub-1GHz OOK/FSK Transmitter
Holtek Semiconductor In...
 
 Related keyword From Full Text Search System
EIA1718A-2P control EIA1718A-2P products EIA1718A-2P Switch EIA1718A-2P electronics EIA1718A-2P baumer ivo gxmmw
EIA1718A-2P 13MHz EIA1718A-2P volts EIA1718A-2P datasheet pdf EIA1718A-2P Processor EIA1718A-2P Server
 

 

Price & Availability of EIA1718A-2P

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.6438519954681