| PART |
Description |
Maker |
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR400S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| KDR701S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR505S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| RB521ZS-301 |
Schottky Barrier Diode
0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN
Schottky Barrier Diode
|
Rohm
Incon, Inc.
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| CDBURT0230R-HF CDBUR0230R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBU0520-HF-12 CDBU0520-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
