| PART |
Description |
Maker |
| TPSD226K035R0400 TPSC226K016R0375 TPSE107K016R0100 |
KONDENSATOR TANTAL SMD 22UF 35V
KONDENSATOR TANTAL SMD22UF 16V
KONDENSATOR TANTAL SMD 100UF16V
KONDENSATOR TANTAL SMD 100UF 16V
KONDENSATOR TANTAL SMD 100UF 10V
KONDENSATOR TANTAL SMD 47UF 10V
KONDENSATOR钽贴70UF 10V
KONDENSATOR TANTAL SMD 68UF 16V
KONDENSATOR TANTAL SMD 330UF 6.3V
KONDENSATOR TANTAL SMD 100UF 6.3V
KONDENSATOR TANTAL SMD 470UF 10V
KONDENSATOR TANTAL SMD 33UF 10V
KONDENSATOR TANTAL SMD 33UF 35V
|
|
| SHD125022 SHD125022N SHD125022P SHD125022D |
HERMETIC POWER SCHOTTKY RECTIFIER 175∑C Maximum Operation Temperature 3 A, SILICON, RECTIFIER DIODE, TO-254AA
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron Semiconductor
SENSITRON[Sensitron]
|
| SHD125445P SHD125445D SHD125445 SHD125445N |
HERMETIC POWER SCHOTTKY RECTIFIER 175∑C Maximum Operation Temperature
|
Sensitron
|
| SHD114624 |
HERMETIC POWER SCHOTTKY RECTIFIER 175?C Maximum Operation Temperature
|
Sensitron
|
| SHD126422 |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175?C Operating Temperature
|
Semtech Corporation
|
| SHD126445 |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175?C Operating Temperature
|
Sensitron
|
| CSDZ-10Z-2.45G |
2300 MHz - 2600 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.2 dB INSERTION LOSS-MAX 0.175 X 0.175 INCH, 0.043 HEIGHT, SURFACE MOUNT PACKAGE-4
|
MERRIMAC INDUSTRIES INC
Merrimac Industries, Inc.
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
