| PART |
Description |
Maker |
| IRL3102 IRL3102L |
Advanced Process Technology
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
| SFI2955 SFI2955TU |
60V P-Channel A-FET
P-CHANNEL POWER MOSFET
Advanced Power MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRFP3415PBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFL4105PBF IRFL4105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
Vishay Siliconix
International Rectifier
|
| IRLS630A |
Advanced Power MOSFET 6.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFRU220A IRFR_U220A IRFR220A IRFU220A IRFR/U220A |
4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
ADVANCED POWER MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFP150 IRFP150A IRFP150ANL |
N-CHANNEL POWER MOSFET
Advanced Power MOSFET
100V N-Channel A-FET / Substitute of IRFP150
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRLWI540A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
