| PART |
Description |
Maker |
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| IRGMC40F |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier
|
| IRG4MC40U |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier, Corp.
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| HFA40HF120 |
1200V 11A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package
HEXFRED TM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| AUIRGDC0250 |
1200V Automotive Low VCEon Discrete IGBT in a Super TO-220 package
|
International Rectifier
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
