PART |
Description |
Maker |
2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
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Toshiba Corporation Toshiba Semiconductor
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2SK2038 K2038 |
2SK2038 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR From old datasheet system N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型(高速,高电流开关应用)
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Toshiba. TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
LT1500 LT1500CS LT1500CS-3 LT1500CS-5 LT1500IS LT1 |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 1.3 A SWITCHING REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDSO14 Adaptive-Frequency Current Mode Switching Regulators From old datasheet system
|
Linear Technology, Corp. Linear Technology Corporation LINER[Linear Technology]
|
CMPD4150 |
high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) From old datasheet system HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
MMBT3904 SMBT3904 SMBT3904/MMBT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
2SK1119 SK1119 E001314 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING
|
New Jersey Semi-Conductor Products, Inc.
|