PART |
Description |
Maker |
5082-2300 1N5712 5082-2835 5082-2900 1N5711 5082-2 |
Schottky Barrier Diode for General Purpose Applications Schottky Barrier Diodes for General Purpose Applications Rectifier Diode, Schottky Diode, Single, 8V, Outline 15, 2-Pin TV 53C 53#20 PIN PLUG RECP
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Agilent / Hewlett-Packard
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR331E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR378 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
SBT10100 SBT1020 SBT102010 SBT1030 SBT1040 SBT1045 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
SBJ2620 SBJ2630 SBJ2640 SBJ2645 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
BAT760 BAT76013 |
Medium power Schottky barrier single diode
|
NXP Semiconductors
|